Wafers for LED application
Our focus for the LED market is in utilizing our technology to enable high-brightness LEDs on large area wafers. We provide two product types:
1. LED-wafers:
These wafers can be used straight away to produce LEDs.
2. LED-templates:
To facilitate your in-house designed LED-MQW-structures and enable optimizing of your existing MOVPE-reactor capacity you can use these templates to overgrow them with your epi-structure.
The key advantages of the AZZURRO GaN-on-Si technology for LEDs:
- Suitable for standard Si-semiconductors equipment (fitting wafer size, low bow and opaque substrate) to avoid expensive capital investments and allow for loss cost processing
- Si-substrates conduct the heat during epi-growth much better which allows for better temperature and accordingly wavelength homogeneity
- Less bow during MQW-growth
- Symmetric stress distribution when bonded to Si-carrier for thin-film process
- Substrate removal for high-brightness thin-film LED designs becomes much easier, less expensive and higher yield as you can use standard Si-semiconductors processes
- Less expensive substrate without supply constraints like sapphire and silicon carbide
- Dicing less costly
- By offering our GaN-on-Si-wafers in 150 mm wafer size and later this year also in 200 mm customers can scale their wafer size straight to Si-semiconductor compatible diameters. This together with the appropriate low bow values allows for the use of existing Si-processing capacity as well as business models where chip processing is outsourced to high-yielding and low-cost CMOS-foundries.
