We are a strongly growing semiconductor company and have pioneered the growth of gallium nitride on silicon substrates (GaN-on-Si). We supply our customers worldwide with our next generation of epitaxial wafers for LED and power semiconductor applications. Comparing to current generation wafers the use of our large diameter GaN-on-Si-wafers allows the industry to facilitate standard semiconductor production sites to allow massive cost saving.
We have developed a proprietary and patented technology which allows the growth of low defect GaN crystals on Si-substrates enabling the emerging market for high-brightness LEDs and power semiconductors with reduced switching power loss and higher current densities.
All key economic and technological requirements are addressed by:
We have pioneered the growth of gallium nitride (GaN) on silicon substrates using metalorganic vapour phase epitaxy (MOVPE) and brought it into volume production. This has allowed us to grow strongly and be a successful semiconductor company supplying our customers worldwide with wafers for LED and power semiconductor applications. The success is only possible through a team effort in which all individuals work together to achieve our goals and at the same time have the freedom to bring-in personal experiences, ideas and drive. For our expansion in Dresden, a beautiful historic city and the heart of the semiconductor industry in Europe, we are seeking experienced and highly motivated candidates for various positions.
